When the temperature reached 350°C, argon (99.999%, 220 sccm) was introduced, and then oxygen (99.999%, 80 sccm) was added to the carrier gas at the desired temperature of 750°C. The duration of growth lasted for 5, 30, and 60 min, respectively. We finally

obtained a black layer on the Si substrate after the quartz tube was cooled to room temperature naturally. For comparative studies, we have also prepared the Zn1−x Cu x O samples with different 5-Fluoracil in vivo Cu contents as well as the pure ZnO nanostructure synthesized under the same experiment condition as the others but without copper source. Figure 1 SEM images of the as-fabricated samples taken at different positions. (a) A schematic drawing of the experimental setup. (b) A FE-SEM image of pure ZnO nanowires grown selleck kinase inhibitor without Cu in the source. (c, d, e) FE-SEM images of Zn1−x Cu x O samples located at positions C, B, A, respectively. Insets (b’) and (c’) show the corresponding high-magnification SEM images. The morphology and microstructure of the structures were characterized by field-emission scanning electron microscopy (FE-SEM; Philips XL30FEG, Portland, OR, USA) with an accelerating voltage of 5 kV, high-resolution transmission electron microscopy (HRTEM; JEOL JEM-2100 F, Akishima-shi, Japan), and X-ray diffraction (XRD; Bruker/D8 Discover diffractometer with GADDS, Madison, WI, USA) equipped with a Cu Kα source (λ = 1.5406 Å). Energy-dispersive X-ray (EDX) analysis was also

performed during the FE-SEM observation. The bonding characteristics were analyzed by PHI Quantum 2000 X-ray photoelectron spectroscopy (XPS;

Chanhassen, MN, USA). DCLK1 The micro-Raman in the backscattering geometry and photoluminescence (PL) spectra were recorded at room temperature using a Jobin Yvon LabRAM HR800UV micro-Raman system (Kyoto, Japan) under Ar+ (514.5 nm) and He-Cd (325.0 nm) laser excitation, respectively. The CL measurements were carried out at room temperature using a Gatan Mono-CL system-attached FE-SEM (Pleasanton, CA, USA) with the accelerating voltage of 10 kV. Results and discussions As a reference, specimens of pure ZnO nanostructures were grown in the tube furnace system using Zn powder as the only source material. We can observe that the as-grown products always present the commonly reported nanowire morphology (Figure 1b). The length of the undoped nanowires ranges from 4 to 8 μm, and the diameter is about 150 nm. The high-magnification SEM image is shown in Figure 1 (b’), demonstrating uniform hexagonal cross sections and a smooth surface. With the introduction of Cu in the precursor, the as-grown Zn1−x Cu x O samples exhibit three different morphologies (see in Figure 1c,d,e), which are deposited on the substrates at different positions (marked as C, B, and A in Figure 1a, respectively). For the sample at position C (as shown in Figure 1c), the nanorods are formed, of which the lengths become shorter (approximately 1.