The PL signal was dispersed by a single-grating monochromator and detected by a photomultiplier. Time-resolved PL measurements were performed by pumping to steady state, mechanically switching off the pump beam, and detecting at a fixed wavelength the PL intensity as a function of time. Results Structure and morphology Examples of SEM and TEM images of SiNWs resulting from

long etching times (20 and 60 min) of p+ Si (resistivity 0.005 Ω·cm) are Romidepsin depicted in Figure 1. Micrographs (a1) to (c1) correspond to the 20-min immersion time, while micrographs (a2) to (c2) correspond to the 60-min immersion time. Dense and uniformly distributed SiNWs were formed on the whole Si surface, contrary to what was reported in [11], where the authors mention that only approximately 40% of their Si surface was covered by the SiNWs. The SiNW length was about 6 μm for the 20-min etching time (a1) and about 18 μm for the 60-min etching time (a2). Their average lateral size was approximately 100 nm in both cases, their cross-sectional shape being ‘celery stick-like.’ This size depends mainly on the concentration of

Ag ions in the solution. The distance selleck chemical between the nanowires varied between few nanometers and few tens of nanometers. The micrographs (b1) and (b2) show the interface between the nanowires and the Si surface underneath them. It is clearly deduced from these micrographs that this interface is not sharp but shows an important undulation at the SiNW base. In addition, a porous Si film is formed at the SiNW base, whose thickness increases with the increase of the etching time. The

thickness of this film ifenprodil was about 0.1 μm for the sample etched for 20 min and about 5 μm for the sample etched for 60 min. The pore size in this film was less than 20 nm (mesoporous film). In our opinion, the formation of this film is at the origin of the mesoporous structure of the SiNWs from p+ Si wafers. The presence of such a porous Si film at the interface between the SiNWs and the Si substrate was also reported recently by To et al. [19] for SiNWs formed on n+ Si wafers. This will be discussed in more detail below. Figure 1 SEM and TEM micrographs from SiNWs on highly boron-doped Si. Cross-sectional SEM and TEM micrographs of long porous SiNWs on p+ Si (resistivity 0.005 Ω·cm) etched for 20 min (a1, b1, and c1) and 60 min (a2, b2, and c2), respectively. Micrographs (a1) and (a2) are SEM images of the nanowires at low magnification and illustrate the existence of a porous Si layer at the interface between the nanowires and the Si substrate. This layer is thicker in the case of the longer etching time, and its structure is porous as it clearly appears in the SEM images (b1) and (b2), obtained at higher magnification. On the other hand this layer is thinner in the case of the 20-min etching time, as illustrated in (b1). Micrographs (c1) and (c2) are dark-field TEM images of the same nanowires etched for 20 min (c1) and 60 min (c2), respectively.