cm). The electrolytic solution was a mixture of HF and ethanol (3 EtOH(99.9%)/2 HF(50%) v.v.) and the anodization current density was J = 20 mA/cm2. The resulting layer had a porosity of 76% and a dendritic structure as presented in Figure 1. The porous Si layer was capped with 500 nm SiO2 in order to stabilize it over time and achieve better planarization of the porous Si surface for further processing. On top of PSi, covered

by SiO2, a set of coplanar waveguide transmission lines (CPW TLines), made of 1-μm-thick patterned Al, was integrated (see Figure 2). Figure 1 SEM image of highly porous Si. SEM image of highly porous Si formed on p + Si with resistivity 1 to 5 mΩ.cm. It depicts the vertical pores with dendrite structure of the material. Pore size is between 9 and 12 nm. Figure 2 Schematic representation

check details of local porous Si layer on Si wafer and geometry of CPW TLine. (a) Schematic representation of the locally formed porous Si layer on the Si wafer, on which the CPW TLine is integrated. (b) Topology of the CPW TLine with respective dimensions. For comparison, identical CPW TLines were also fabricated on three other substrates, as follows: the first was the state-of-the-art Momelotinib chemical structure trap-rich high-resistivity (HR) Si RF substrate [15]. This substrate was an n-type HR-Si wafer with nominal resistivity higher than 10 kΩ.cm, covered by a bilayer of a 500-nm-thick trap-rich poly-Si layer, deposited by low-pressure chemical vapor deposition (LPCVD) at 625°C, and a-500 nm-thick TEOS SiO2 layer. The trap-rich layer is used to minimize the parasitic surface conduction within the Si layer underneath the silicon oxide by trapping the parasitic Phospholipase D1 charges and thus restoring the initial high resistivity of the Si substrate [17]. The

second substrate was a 380-μm-thick standard Si wafer used in CMOS-integrated circuits (ICs) (p-type, resistivity 1 to 10 Ω.cm). Finally, the last substrate was a 500-μm-thick quartz substrate, which is one of the off-chip RF substrates with almost negligible losses. This last substrate was used for comparison with the three other Si-based substrates. RF measurements and de-embedding The S-parameters of the CPW TLines were measured in the 140-to-210-GHz range with an HP 8510B vector network analyzer (VNA) from Agilent (Santa Clara, CA, USA), combined with a millimeter-wave VNA extension module by Oleson Microwave Labs (Morgan Hill, CA, USA). All the measurements were calibrated using the find more Line-Reflect-Reflect-Match (LRRM) algorithm of the WinCal software from Cascade Microtech (Beaverton, OR, USA). A de-embedding procedure is always necessary in order to decouple the device response from the parasitics due to the contacts and pads. The method followed was the two-line method, using the measured S-parameters of two lines with different length (8 mm and 500 μm) [18].