After around 10.5 min, the charge transfer resistances of R a and R b exhibit the same value. This allows splitting the entire Co deposition process into two sections. In section I, R b is lower than R a. This means that the Co deposition occurs primarily via the indirect mechanism (via Co(OH)2). In section II, the Torin 2 manufacturer situation is vice versa. The Co deposition occurs primarily via the direct mechanism. The share of the direct Co deposition out of the overall process is

determined by 1 − R a / (R a + R b). Consequently, the share of the Co deposition via Co(OH)2 is given by 1 − R b / (R a + R b). The absence of strong oscillations in R b also indicates that this process appears to be independent from the ending of the diffusion limitation of boric acid. The capacitance C b is assigned to the corresponding double layer capacity of the indirect Co deposition. The decline in C b could be explained in the same way as for C a. The change in the slope of C a after about 10.5 min is most probably related to the now preferential Co deposition via the direct deposition process. As an additional side

reaction of the Co deposition, hydrogen can form [16], but a process related to this hydrogen evolution during the Co deposition could not be identified in the recorded ISRIB cost FFT-IS data TPX-0005 order within the investigated frequency range, most probably because it is a very slow process that is outside the investigated frequency range as it is found for the Ni deposition [22]. Structural characterization The cross-sectional view on the Co nanowire/InP

membrane is presented in Figure 3a. The Co nanowires appear brighter in the SEM image compared to the InP membrane. The fractures old observed in the Co nanowires and the InP membrane are the result of the sample cleavage and are not a structure property. The Co nanowires grow from the Au plating base on the back side of the membrane. No nucleation of crystallites on the Al2O3-coated InP pore walls have been observed. The Co nanowires are dense and show no signs of porosity. They exhibit a rectangular shape since they grow in rectangular pores. The average nanowire diameter is about 300 nm, and the average distance between adjacent nanowires is about 60 nm. Figure 3b shows a typical XRD pattern of a Co nanowires/InP membrane composite. Two sharp peaks are found that are assigned to InP 200 and InP 400 as it is expected for single-crystalline (100) oriented InP wafers with pores along the [100] direction. The remaining three small and rather blurry peaks can be assigned to Co 301, Co 220, and Co 304. The Co nanowires are crystalline and exhibit the typical hcp crystal structure, but there are no signs of a texturing of the Co nanowires. The shape of the two Co peaks indicates small coherently scattering areas and, thus, rather small Co grain sizes.