According to the thermionic emission model [3], the direct reflection of the SBH is the reverse current density, and therefore, by controlling the Schottky barrier height, we can modulate the current density and acquire the needed contact type without modifying the fabrication learn more process. In a previous study, Connelly et al. [4] have raised a method to reduce the SBH of the metal/Si contact by using

a thin Si3N4 through the creation of a dielectric dipole [5]. Similar researches have been dedicated to the study of the SBH modulation on Ge [6–9], GaAs [10], InGaAs [10, 11], GaSb [12], ZnO [13], and organic material [14] by inserting different dielectrics or bilayer dielectrics. According to the bond polarization theory [15], an electronic dielectric dipole is formed between the inserted insulator and semiconductor native oxide which results in a shift of the SBH, as

Figure 1 depicts. The origin of this website the dipole formation at the dielectric/SiO2 interface is described in Kita’s model [16], and in this model, the areal density difference of oxygen atoms at the dielectric/SiO2 interface is the driving force to form the dipole. Since the areal density of oxygen atoms (σ) of Al2O3 is larger than that of SiO2, the σ difference at the interface will be compensated by oxygen transfer from the higher-σ to the lower-σ oxide which creates oxygen vacancies in the higher-σ oxide (Al2O3) and negatively charged centers in the lower-σ oxide PAK5 (SiO2), and the corresponding direction of the dipole moment is from SiO2 to Al2O3. eFT-508 concentration As a result, this dipole is a positive dipole which can reduce the SBH and therefore increases the current density. As the thickness of the inserted insulator increases, it becomes

more difficult for the current to tunnel through the insulator, and the tunneling barrier is the dominant factor of the total barrier height, which decreases the current density in the end. Figure 1 A schematic band diagram of a shift in the metal/semiconductor’s high barrier height. This is done by forming an electronic dielectric dipole between the insulator and the oxide of semiconductor in accordance with the bond polarization theory. In this work, we demonstrate the modulation of the current density in the metal/n-SiC contact by inserting a thin Al2O3 layer into a metal-insulator-semiconductor (MIS) structure. Al2O3 is chosen as the interfacial insulator for its large areal oxygen density (σ) which means that the formation of dipole is much stronger and shifts the SBH more effectively than that induced by other insulators based on the bond polarization theory [15] and Kita’s model [16]. As for the choice of metal, aluminum (Al) is suitable due to its low work function (4.06 to 4.26 eV) for the investigations of the Fermi level shift toward the conduction band of SiC (electron affinity = 3.3 eV).