For a negative applied bias, the oxygen ion diffusion process starts deceleration that results in filament breaking (intermediate switching state). At a higher negative potential, the diffusion became negligible with majority of ruptured conducting filaments, hence no observable threshold switching state. This polarity dependence implies that the switching transition hinges on the delicately balanced migration of

oxygen ions, which must be carefully considered to achieve reliable device operations. Figure 4 Schematic of the Co-rich metallic filament in Co 3 O 4 . CP673451 cost With oxygen gradient-induced drift and the field-induced diffusion motions of the oxygen ions (bulk film effect). In addition to bulk film effect, the interface OICR-9429 research buy between ITO of the bottom electrode (n-type) nanosheet and cobalt oxide (p-type) MDV3100 is also critical to explain switching characteristics Consider the interface as a classical p-n junction with negatively charged electrons or oxygen ions in cobalt oxide and positively charged electrons or oxygen ions in oxygen vacancies in ITO (acting as minority

charge carriers in both regions) accumulate at the interface to form a depletion layer. Under forward voltage sweep, these minority charge carriers start moving away from the junction, tending to decrease the width of depletion region with a sudden increase in current (high conduction state or LRS), as shown in Additional file 1: Figure S2. The negative applied voltage facilitates the migration of minority charge carriers in both regions towards the junction, which results in the increase of depletion layer causing decrease in current (low conduction state or HRS). To exclude the possible metal/metal oxide (Au/Co3O4 layers) interface effect (Au used as a top electrode), a test sample without a gold top electrode was also investigated, and the results are shown in Figure S3. It is interesting to note that the RS properties

of the device were quite repeatable and similar this website to the device with Au as the top electrode. This interesting behavior indicates that Au has no significant effects in the resistive switching properties of Co3O4 except for acting as an electrical contact of these devices. Conclusions In summary, Co3O4 thin films with nanosheet structure were prepared with a facile electrochemical deposition method. Excellent bipolar resistance switching properties, stable endurance, and retention performance for more than 4 h without observable degradation were achieved. The oxygen ions/vacancies throughout the as-deposited film and interface with minority charge carrier effect are responsible for the switching behavior. Furthermore, the effect of Au top electrode was investigated to verify the origin of resistive switching properties in these devices. The present work demonstrates that these structures have the potential for next-generation non-volatile memory applications.