It was proven that the dielectric breakdown field (E B) of the sample annealed in O2 ambient was dominated by the breakdown of IL, while the E B of the samples annealed in Ar, FG, and N2 ambient was dominated by the breakdown of bulk Y2O3. The sample annealed in O2 ambient demonstrated the best leakage current density-breakdown field due to the attainment of the largest bandgap, the largest conduction band offset, and the highest barrier height value. Authors’ information HJQ received his MSc degree in 2010 from Universiti Sains Malaysia, Penang, Malaysia,
where he is currently working on a PhD degree in Materials Engineering Selleck R788 in the School of Materials and Mineral Resources Engineering. KYC received his PhD degree from the School of Microelectronic Engineering, Griffith University, Brisbane, Australia, in 2004. He is currently an associate professor with Universiti Sains Malaysia, Penang, Malaysia. Acknowledgments One of the authors (HJQ) would like
to acknowledge Universiti Sains Malaysia, The USM RU-PRGS (8044041), and The Universiti Sains Malaysia Vice Chancellor’s Award for their financial support. References 1. Huang W, Khan T, Chow TP: Enhancement-mode check details n-channel GaN MOSFETs on p and n-GaN/sapphire substrates. IEEE Electron Device Lett 2006, 27:796–798.CrossRef 2. Chang SJ, Wang CK, Su YK, Chang CS, Lin TK, Ko TK, Liu HL: GaN MIS capacitors with photo-CVD SiNxOy insulating layers. J Electrochem Soc 2005, 152:G423-G426.CrossRef 3. Chang YC,
Chang WH, Chiu HC, Tung LT, Lee CH, Shiu KH, Hong M, Kwo J, Hong JM, PIK3C2G Tsai CC: Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric. Appl Phys Lett 2008, 93:053504–1-053504–3. 4. Li S, Ware ME, Wu J, Kunets VP, Hawkridge M, Minor P, Wang Z, Wu Z, Jiang Y, Salamo GJ: Polarization doping: reservoir effects of the substrate in AlGaN graded layers. J Appl Phys 2012, 112:053711–1-053711–5. 5. Li S, Ware M, Wu J, Minor P, Wang Z, Wu Z, Jiang Y, Salamo GJ: Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN. Appl Phys Lett 2012, 101:122103–1-122103–3. 6. Quah HJ, Cheong KY, Hassan Z: Forthcoming gallium nitride based power devices in prompting the development of high power applications. Mod Phys Lett B 2011, 25:77–88.CrossRef 7. Quah HJ, Cheong KY, Hassan Z, Lockman Z: Effect of postdeposition annealing in oxygen ambient on gallium-nitride-based MOS capacitors with cerium oxide gate. IEEE Trans Electron Dev 2011, 58:122–131.CrossRef 8. Cheong KY, Moon JH, Kim HJ, Bahng W, Kim NK: Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide. J Appl Phys 2008, 103:084113–1-084113–8.CrossRef 9. Nakano Y, Jimbo T: Interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors. Appl Phys Lett 2003, 82:218–220.CrossRef 10.